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| BC546 THRU BC549 Small Signal Transistors (NPN) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) NPN Silicon Epitaxial Planar Transistors These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549 is a low-noise type and available in groups B and C. As complementary types, the PNP transistors BC556 ... BC559 are recommended. FEATURES max. .022 (0.55) .098 (2.5) C B E On special request, these transistors are also manufactured in the pin configuration TO-18. MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Collector-Base Voltage BC546 BC547 BC548, BC549 BC546 BC547 BC548, BC549 BC546 BC547 BC548, BC549 BC546, BC547 BC548, BC549 VCBO VCBO VCBO VCES VCES VCES VCEO VCEO VCEO VEBO VEBO IC ICM IBM -IEM Ptot Tj TS Value 80 50 30 80 50 30 65 45 30 6 5 100 200 200 200 5001) 150 -65 to +150 Unit V V V V V V V V V V V mA mA mA mA mW C C Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case 4/98 BC546 THRU BC549 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol h-Parameters at VCE = 5 V, IC = 2 mA, f = 1 kHz, Small Signal Current Gain Min. Typ. Max. Unit Current Gain Group A B C Current Gain Group A Input Impedance B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre - - - 1.6 3.2 6 - - - - - - 220 330 600 2.7 4.5 8.7 18 30 60 1.5 * 10-4 2 * 10-4 3 * 10-4 - - - 4.5 8.5 15 30 60 110 - - - - - - k k k S S S - - - Current Gain Group A B C DC Current Gain at VCE = 5 V, IC = 10A Current Gain Group A B C Current Gain Group A B C Current Gain Group A B C at VCE = 5 V, IC = 2 mA hFE hFE hFE hFE hFE hFE hFE hFE hFE RthJA VCEsat VCEsat VBEsat VBEsat VBE VBE - - - 110 200 420 - - - - - - - - 580 - - - - - - 90 150 270 180 290 500 120 200 400 - 80 200 700 900 660 - 0.2 0.2 0.2 - - - - - 220 450 800 - - - 2501) 200 600 - - 700 720 15 15 15 4 4 - - - - - - - - - K/W mV mV mV mV mV mV nA nA nA A A at VCE = 5 V, IC = 100 mA Thermal Resistance Junction to Ambient Air Collector Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base-Emitter Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA Collector-Emitter Cutoff Current at VCE = 80 V at VCE = 50 V at VCE = 30 V at VCE = 80 V, Tj = 125 C at VCE = 50 V, Tj = 125 C 1) BC546 BC547 ICES ICES ICES ICES ICES BC548, BC549 BC546 BC547 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case BC546 THRU BC549 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol at VCE = 30 V, Tj = 125 C BC548, BC549 ICES fT CCBO CEBO Min. - - - - Typ. - 300 3.5 9 Max. 4 4 - 6 - Unit A A MHz pF pF Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz Emitter-Base Capacitance at VEB = 0.5 V, f = 1 MHz Noise Figure at VCE = 5 V, IC = 200 A, RG = 2 k, f = 1 kHz, f = 200 Hz BC546, BC547 BC548 BC549 BC549 F F F - - - 2 1.2 1.4 10 4 4 dB dB dB at VCE = 5 V, IC = 200 A, RG = 2 k, f = 30...15000 Hz RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549 RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549 RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549 RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549 |
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